Hall Effect Experiment, HEX-21C

Hall Effect Experiment, HEX-21C 

We manufacture, export and supply Hall Effect Experiment Device in Roorkee, Uttarakhand, India.

Introduction

The resistivity measurements of semiconductors can not reveal whether one or two types of carriers are present; nor distinguish between them. However, this information can be obtained from Hall Coefficient measurements, which are also basic tools for the determination of carrier density and mobilities in conjuction with resistivity measurement.

As you are undoubtedly aware, a static magnetic field has no effect on charges unless they are in motion. When the charges flow, a magnetic field directed perpendicular to the direction of flow produces a mutually perpendicular force on the charges. When this happens, electrons and holes will be separated by opposite forces. They will in turn produce an electric field (Eh) which depends on the cross product of the magnetic intensity, H, and the current density, J.E h = RJ x HWhere R is called the Hall CoefficientNow, let us consider a bar of semiconductor, having dimension, x, y and z. Let J is directed along X and H along Z then Eh will be along Y.

Where Vh is the Hall voltage appearing between the two surfaces perpendicular to y and I=J yz 

The set-up consists of following units:

• Hall Probe (Ge Crystal - n type) 
• Hall Probe (Ge Crystal - p type)
• Hall Probe Multipurpose Stand, HPS-2pcs
• Hall Effect Set-Up, Model DHE-21C
• Electromagnet, Model EMU-50V )
• Constant Current Power Supply, DPS-50C 
• Digital Gaussmeter, DGM-202C 
• Computer Aided Measurement Module, SES CAMM-2, 

complete with suitable software Complete in all respect, except a computer